期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 7, 期 3, 页码 266-272出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2007.915020
关键词
analog hardware description language (AHDL); analytical model; charge sensitivity; hybrid simulation; radio frequency SET (RF-SET); single-electron transistor (SET)
Hybrid simulation was performed to analyze the response of the real-time reflection-type radio frequency single-electron transistor (RF-SFT) measurement system. A compact and physically-based analytical SET model, which was validated with a Monte Carlo simulator, was used to simulate the SET characteristics, while SPICE equivalent circuits were implemented to simulate all other components of the RF-SET measurement system. The impact of various key parameters on the RF-SET response was demonstrated for a carrier frequency much less than Ile (I is the typical current through the SET). It was revealed that an inevitable feed-through loss between the tank circuit and the cryogenic amplifier, and high-frequency parasitics of the inductor degrade the RF-SET performance significantly. As such, they have to be optimized to experimentally realize file shot-noise-limited charge sensitivity.
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