期刊
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
卷 60, 期 12, 页码 4080-4088出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2012.2221735
关键词
Cryogenic low-noise amplifier (LNA); metamorphic high electron-mobility transistor (mHEMT); monolithic microwave integrated circuit (MMIC)
资金
- Ministerio de Ciencia e Innovacion [TRA2009-0304]
- Instituto Geografico Nacional
- IAF-Fraunhofer funds
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide are reported. A three-stage LNA, operating in 4-12 GHz and cooled to 15 K exhibits an associated gain of 31.5 dB +/- 1.8 dB and average noise temperature of 5.3 K (NF = 0.079 dB) with a low power dissipation of 8 mW. Additionally another three-stage LNA 25-34 GHz cooled to 15 K has demonstrated a flat gain of 24.2 dB 0.4 +/- dB with 15.2 K (NF = 0.22 dB), average noise temperature, with a very low power dissipation of 2.8 mW on chip. The mHEMT-based LNA MMICs have demonstrated excellent noise characteristics at cryogenic temperatures for their use in radio-astronomy applications.
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