期刊
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
卷 56, 期 5, 页码 1024-1034出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2008.921297
关键词
Bandpass filter (BPF); bond wires; CMOS; interference suppression; mutual inductance; wideband code division multiple access (WCDMA)
Design techniques are presented for the realization of high-performance integrated interference suppression filters using bond-wire inductors. A new configuration is proposed for mitigating the impact of mutual coupling between the bond wires. A differential low-noise amplifier with an integrated on-chip passive interference suppression filter is designed at 2.1 GHz in a 0.18-mu m CMOS process, and achieves a transmit leakage suppression of 10 dB at 190-MHz offset. The differential filter uses metal-insulator-metal capacitors and bond-wire inductors and occupies only 0.22 mm(2). The cascaded system achieves a measured gain of 9.5 dB with a 1.6-dB noise figure and -5 dBm out-of-band IIP3 and consumes 11 mA from a 2-V supply.
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