期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 49, 期 7, 页码 4405-4408出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2013.2252330
关键词
Magnetic tunnel junctions; micromagnetic simulations; nanofabrication
资金
- FCT [PTDC/CTM-NAN/112672/2009, PTDC/CTM-NAN/110793/2009, PTDC/CTM-NAN/118236/2010, SFRH/BD/74975/2010, SFRH/BPD/72359/2010]
- ON2 project from PO Norte
- FCT through the Instituto de Nanociencia e Nanotecnologia (IN) Associated Laboratory
- [IMAGIC-EU-FP7-ICT-288381]
- Fundação para a Ciência e a Tecnologia [SFRH/BD/74975/2010, PTDC/CTM-NAN/112672/2009] Funding Source: FCT
The switching field dependence on the size of nanometric magnetic tunnel junctions was studied. CoFe/Ru/CoFeB/MgO/CoFeB nanopillars were fabricated down to 150 x 300 nm(2) and characterized, revealing a squared transfer curve with a sharp transition between magnetic states. A micromagnetic finite element tool was then used to simulate the magnetic behavior of the studied nanopillar. The simulations indicated a single-domain like state at remanence, also displaying a sharp transition between parallel/antiparallel free-layer configurations. Overall, the experimentally measured switching fields (H-sw) were smaller than those obtained from simulations. Such trend was consistent with the presence of a particular free layer profile, signature of the two angle etching step used for pillar definition. Further decrease of experimental H-sw was attributed to local defects and thermal activated processes. This study was able to validate this particular simulation tool for the control of the nanofabrication process.
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