期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 47, 期 10, 页码 4033-4036出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2011.2140363
关键词
Epitaxial growth; FeRh; first-order phase transition; thin films
Compositional and temperature dependent ferromagnetic/anti-ferromagnetic transition of highly textured Fe(100-x)Rh(x) (where x = 35 to 65) thin films deposited epitaxially on MgO (001) single crystal substrates were studied. First-order transition from ferromagnetic to anti-ferromagnetic phase was observed around 48 at. % Rh where x-ray diffraction spectra revealed a sharp discontinued decrease in lattice parameter-c coupled with a sudden decrease in magnetization from 1600 to 200 emu/cm(3). The transition was sharp compared to non-textured randomly oriented thin films, bearing similarities to bulk FeRh. Temperature-dependent x-ray diffraction spectra and magnetic measurements revealed the occurrence of temperature induced anti-ferromagnetic to ferromagnetic phase transitions for films with Rh content larger than 47 at. %. The temperatures at which such transitions occurred were dependent on the Rh content, and broadened with increasing amounts of Rh.
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