期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 46, 期 6, 页码 1565-1568出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2010.2041045
关键词
Magnetic semiconductor; magnetron sputtering; nitrogen-doping; ZnCoO
资金
- National Science Council [NSC97-2112-M-006-010, NSC98-2112-M-006-012]
Radio-frequency magnetron sputtering technique was used in manufacturing thin films of Co doped and (Co, N) co-doped ZnO (Co:ZnO and Co:Zn(N, O)). The sputtering target was a commercial Zn-Co-O compound with 5% Co in weight. The sputtering gas of pure argon was used for Co:ZnO films; and two other different gases, a mixture of Ar and N-2 (gas flow-rate ratio 15:5 sccm) and a pure N-2, was used for (Co, N):ZnO films. Without N-doping, the films show n-type electrical conduction. Upon N-doping, films become poorly conductive and even exhibit p-type conduction for pure N-2 sputtering-gas. Paramagnetism is observed in the film with no N-doping (Co:ZnO); but superparamagnetism and then a mixture of ferromagnetism plus paramagnetism were observed with increasing N-doping. Based on the magnetic phase diagram proposed by Coey, we explain in detail the distinct magnetic properties which are closely related with the microstructure and electrical properties of each sample.
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