期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 46, 期 6, 页码 2009-2011出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2010.2040813
关键词
Domain pattern; oxide/Co interface; perpendicular magnetic anisotropy
资金
- Korea government [2009-0083083, 2009-0084542]
- MEST
- KRCF DRC program
- National Research Council of Science & Technology (NST), Republic of Korea [2E21670] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0084542] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The domain patterns and magnetization reversal behaviors in oxide/Co/Pt films are examined with varying the thickness of Co layer from 0.7 nm to 2.0 nm. The films are grown on Al2O3, MgO and SiO2 layers. All the films exhibit strong perpendicular magnetic anisotropy, but the anisotropy decreases with increasing Co layer thickness for all the oxide layers. The decrement rate is different for different oxide layers. The domain patterns show the transition between the wall-motion and dendrite-growth dominant behaviors, and the critical thickness is estimated to be about 1.0 nm irrespective of the oxide layers. We summarize the magnetic properties of oxide/Co/Pt films with respect to the Co-thickness and various oxide layers.
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