期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 46, 期 6, 页码 1730-1732出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2010.2042577
关键词
Density functional theory; half-metal; interface states; magnetite Fe3O4; magnetic tunnel junctions
资金
- ANR [BLAN07-188976, JCJC07-0138-01]
We present an ab-initio calculation of the electronic structure near the interfaces of the Fe3O4-MgO-Fe3O4 magnetic tunnel junction, and we give a clear description of the interface states which can exist in this device. We describe in particular the decay rate of these localized states on both sides of the interface. These interface states participate to the tunnel current across the MgO barrier and could be detected in magnetotransport measurements. Our results have been obtained with a code based on the density functional theory, with the local spin density approximation.
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