期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 45, 期 10, 页码 3909-3911出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2009.2021410
关键词
Creep; cryostat; low temperature; magnetic domains; magnetization reversal; magnetooptic Kerr effect
资金
- National Research Foundation of Korea [과06A1102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The temperature dependence of the magnetic domain-wall creep behavior is examined in Pt/CoFe/Pt films with perpendicular anisotropy. The domain-wall creep behavior is monitored by a magneto-optical Kerr effect microscope equipped with a cryostat, which enables us to control the temperature from the ambient temperature down to 85 K. It is found that the domain-wall speed under a fixed magnetic field is decreased exponentially proportional to the inverse of the temperature, which can be explained as a typical behavior of the thermally activated process. By measuring the field-dependent domain-wall speed, we confirm that the domain-wall creep theory is valid with the value of the creep exponent 1/4, over the temperature range we examine.
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