期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 44, 期 12, 页码 4706-4710出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2008.2002924
关键词
Ferromagnet; hysteresis; magneto-electronics; magneto-resistance
资金
- Department of Energy
- U. S. Department of Energy [DE-AC04-94AL85000]
We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.
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