期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 60, 期 2, 页码 440-449出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2012.2187417
关键词
Insulated-gate bipolar transistors (IGBTs); integrated gate-commutated thyristors (IGCTs); power semiconductor devices; semiconductor losses; semiconductor measurements
Recently developed insulated-gate bipolar transistor (IGBT) press-pack (PP) devices with a blocking voltage of 4.5 kV are being used in medium-voltage converters as an alternative to integrated gate-commutated thyristors (IGCTs). This paper presents an overview of PP packaging and both semiconductor technologies. A quantitative comparison of these devices is achieved through measurements for a 4.5-kV 1.2-kA IGBT and a 4.5-kV 4-kA IGCT. The laboratory test bench for the switching transient characterization at a dc-link voltage of 2.5 kV and currents up to 3 kA is described. Conduction, blocking, and switching behavior for junction temperatures up to 125 degrees C are investigated. The IGCT and the IGBT are tested using a di/dt-limiting clamp circuit. In addition, the IGBT is tested in hard switching mode.
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