期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 10, 页码 4441-4447出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2862901
关键词
Aluminum gallium nitride; compositional nonuniformity; photodetector; photoresponse
资金
- DTRA Basic Research Program [HDTRA1-16-1-0007]
- Department of Energy National Nuclear Security Administration [DE-NA0001944]
- University of Rochester
- New York State Energy Research and Development Authority
The influence of aluminum composition (Al%) nonuniformity on AlGaN metal-semiconductor-metal photodetectors was thoroughly studied on a device level. The Al% fluctuation was precisely measured by X-ray photoelectron spectroscopy and mapped by energy dispersive spectrometry; the dislocation density was investigated by X-ray diffraction rocking curve. Both theoretical simulation and experimental testing showed a significant difference in the responsivity, dark current, and decay time in the device with different Al%. The Al% fluctuation is also a likely cause of the long decay time of the device.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据