期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 61, 期 3, 页码 844-849出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2298693
关键词
Charge; charge transfer; charge-coupled devices; CMOS image sensors (CIS); deep submicrometer process; transfer inefficiency; trapped charge
This paper presents measurements performed on charge-coupled device (CCD) structures manufactured on a deep micrometer CMOS imaging technology, in surface channel CCD and in buried channel CCD mode. The charge transfer inefficiency is evaluated for both CCD modes with regard to the injected charge, and the influence of the rising and falling time effect is explored. Controlling the ramp and especially reducing its abruptness allows to get much lower charge transfer inefficiency in buried CCD mode. On the contrary, we did not observe any effect of the ramp on surface channel CCD mode because of the presence of interface traps at the silicon-oxide interface.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据