期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 61, 期 5, 页码 1369-1376出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2310200
关键词
Crossbar; read margin; read scheme; resistive random access memory (RRAM); select device; sneak path
资金
- AFOSR through MURI [FA9550-12-1-0038]
- National Science Foundation [ECCS-0954621]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0954621] Funding Source: National Science Foundation
Passive crossbar resistive random access memory (RRAM) arrays require select devices with nonlinear I-V characteristics to address the sneak-path problem. Here, we present a systematical analysis to evaluate the performance requirements of select devices during the read operation of RRAM arrays for the proposed one-selector-one-resistor (1S1R) configuration with serially connected selector/storage element. We found high selector current density is critical and the selector nonlinearity (ON/OFF) requirement can be relaxed at present. Different read schemes were analyzed to achieve high read margin and low power consumption. Design optimizations of the sense resistance and the storage elements are also discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据