4.6 Article

Formation and Evolution of Nickel Silicide in Silicon Nanowires

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 61, 期 10, 页码 3363-3371

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2342502

关键词

Activation energy; contacts; instability; kinetics; nanowire (NW); nickel silicide

资金

  1. Russell Berrie Nanotechnology Institute
  2. Micro Nano Fabrication Unit, Technion, Haifa, Israel
  3. Ministry of Industry, Trade and Labor, through the MAGNET Program, ALPHA Consortium

向作者/读者索取更多资源

Thermally activated axial intrusion of nickel silicides in silicon nanowires (SiNWs) is utilized to form nickel silicide/silicon contacts in SiNW field effect transistors. The growth of different nickel silicides is often accompanied by local thickening and tapering of the NW, up to its full disintegration. In this paper, this process was investigated in SiNWs of 30-60 nm in diameters with prepatterned Ni electrodes after annealing cycles at different temperatures of 300 degrees C-440 degrees C and times up to 120 s. From the temperature dependence of the intrusion lengths, activation energy of 1.45 eV for the surface diffusion of nickel was extracted. In several cases, periodic thickening of the nickel-rich part is accompanied by tapering of the monosilicide part up to its full dissolution. The kinetics of the nickel silicides growth was described by phenomenological model. For a certain set of parameters, tapering and dissolution of the monosilicide part of the intrusion were predicted, similar to the experimental results.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据