期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 61, 期 7, 页码 2459-2465出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2320979
关键词
4H-SiC; junction barrier Schottky (JBS); trenched junction barrier Schottky (TJBS)
资金
- National High Technology Research and Development Program of China (863 Program) [2011AA050401]
- National Outstanding Youth Fund [51225701]
This paper presents the design, fabrication, and experimental analysis of 1200 V 4H-SiC trenched junction barrier Schottky (TJBS) diodes. Design considerations and device performances of the TJBS devices are compared with those of the conventional planar JBS diodes via numerical simulation, analytical modeling, and experiments. It was found that, for conventional planar JBS diodes, due to its limited P+ implantation depth, there is a tight tradeoff between forward ON-resistance and blocking voltage. This does not only put stringent requirement on obtaining a narrow photolithography line width (similar to 1.5 mu m), but also makes the device design window narrow. The TJBS diodes can substantially alleviate such tradeoff and obtain a larger design window that enables good reverse blocking and forward conduction capabilities at the same time. As a result, this structure demands less restriction on line width control (2.2-3.2 mu m) of the fabrication process and hence can improve the device yield.
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