期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 9, 页码 2795-2801出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2274196
关键词
MOSFET; nanowire; non equilibrium Green's functions; phonon-scattering; quantum transport; traps; Tunnel-field effect transistor (FET)
资金
- French ANR QUASANOVA project
- Italian MIUR Futuro in Ricerca [RBFR10XQZ8]
- Vinci
- Cooperlink projects for Italy-France collaborations
This paper and the companion work present a full quantum study of the influence of interface traps on the I-V characteristics of InAs nanowire Tunnel-field effect transistors (FETs) and MOSFETs. To this purpose, we introduced a description of interface traps in a simulator based on non equilibrium Green's function formalism, employing an 8x8 k.p Hamiltonian and accounting for phonon-scattering. In our model, traps can affect the I-V curves of the transistors both by modifying the device electrostatics and by directly participating the carrier transport. This paper investigates the impact of single trap on the I-V characteristics of Tunnel-FETs by varying the trap energy level, its volume and position, as well as the working temperature. Our 3-D self-consistent simulations show that: 1) even a single trap can deteriorate the inverse subthreshold slope of a nanowire InAs Tunnel-FET; 2) shallow traps have the largest impact on subthreshold slopes; and 3) the inelastic phonon-assisted tunneling through interface traps results in a temperature dependence of the otherwise temperature-independent Tunnel-FETs I-V characteristics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据