期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 6, 页码 1898-1904出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2255102
关键词
Gallium nitride; HEMTs; Raman scattering; temperature measurement
资金
- Air Force Research Laboratory High-Reliability Electronics Virtual Center Team
In this paper, we utilize micro-Raman spectroscopy to measure temperature and stress in state-of-the-art AlGaN/GaN HEMTs. A rigorous discussion on the physical accuracy, precision, and precautions for diverse Raman thermometry methods is developed. Thermometry techniques utilizing shifts in a single Raman Stokes peak position underpredict the channel temperature due to induction of operational thermoelastic stress in operating devices. Utilizing the change in phonon linewidth by employing a proper reference condition gives true temperature results. Making use of frequency shifts in both the E-2(high) and A(1)(LO) phonon modes offers accurate and time-efficient means to determine the state of temperature and thermal stress in operating AlGaN/GaN HEMTs presuming that linear relations between phonon frequencies and temperature/stress are well determined. Useful applications of this method such as monitoring stress in GaN wafers between fabrication steps and Raman thermography on AlGaN/GaN HEMTs are demonstrated.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据