期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 10, 页码 3238-3248出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2265718
关键词
Broadband LNA; GaN MMIC; GaN technology; robust LNA; synthetic aperture radar (SAR); X-band LNA
资金
- SELEX-ES
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricated in GaN technology is provided, highlighting their noise performance together with high-linearity and high-robustness capabilities. Several SELEX-ES GaN monolithic technologies are detailed, providing the results of the noise characterization and modeling on sample devices. An in-depth review of three LNAs based on the 0.25-mu m GaN HEMT process, marginally described in previous publications, is then presented. In particular, two robust and broadband 2-18-GHz monolithic microwave integrated circuit (MMIC) LNAs are designed, fabricated, and tested, exhibiting robustness to over 40-dBm input power levels; an X-band MMIC LNA, suitable for synthetic aperture radar systems, is also designed and realized, for which measurement results show a noise figure similar to 2.2 dB with an associated gain >25 dB and robustness up to 41-dBm input power level.
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