期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 7, 页码 2432-2435出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2264319
关键词
Aluminum doped zinc oxide (AZO); high performance; low temperature process; thin-film transistor (TFT)
资金
- National Basic Research Program of China 973 Program [2011CBA00600]
- National Natural Science Foundation of China [61275025]
High-performance transparent low-temperature top-gate type aluminum doped zinc oxide (AZO) thin-film transistors (TFTs) (W/L = 100 or 10 mu m) are successfully fabricated on glass substrate. All the process temperature is below 100 degrees C. For V-G = -2 to 5 V, the TFTs using sputtering deposit AZO layer at room temperature as channel layer exhibits excellent properties, such as a saturation mobility mu(s) of 285 cm(2)/V.s, a linear field effect mobility mu(l) of 143 cm(2)/V.s, a threshold voltage Vth of 0.9 V, a steep subthreshold swing of 108 mV/decade, a low off-state current value I-off of 5 x 10(-13) A, a high ON/OFF ratio of 2 x 10(9) and a high transmittance of 82.5%. The results highlight that excellent device performance can be realized in AZO TFTs. Note that this is the best performance of AZO TFT ever reported.
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