期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 7, 页码 2171-2177出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2263806
关键词
InAs; nanowire; quantum transport; Si; source-drain tunneling; strain; tight-binding (TB) approach
资金
- Materials, Structures, and Devices Focus Center under the Focus Center Research Program (a Semiconductor Research Corporation entity)
As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (L-g) are scaled to lengths shorter than L-g < 8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario, a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal-orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at L-g < 8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON-state currents in ultrascaled nanowire MOSFETs.
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