期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 6, 页码 1905-1910出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2257790
关键词
Field emission; Ga-doped ZnO nanorod; hydrothermal; photodetector
资金
- Center for Frontier Materials and Micro/Nano Science and Technology
- Advanced Optoelectronic Technology Center, National Cheng Kung University
- National Science Council of Taiwan [NSC 101-2221-E-150-043]
In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 V/mu m and the field enhancement factor is enhanced from 9058 to 13 529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.
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