期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 10, 页码 3025-3031出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2278185
关键词
Fin-FET; Gallium nitride (GaN); high electron mobility transistor (HEMT); MOS; short channel
资金
- Fuji Electric and Smart Lighting ERC [EEC-0812056]
- Cornell NanoScale Facility
- National Nanotechnology Infrastructure Network
- National Science Foundation [ECS-0335765]
The fin-gate structure was fabricated onto AlGaN/GaN MOS channel-high electron mobility transistors (MOSC-HEMTs), and the fin sidewall contribution to the MOS channel characteristics was investigated. In fin-gate MOSC-HEMTs (Fin-MOSC-HEMTs) with 120-nm fin width, significant suppression of short channel effect is obtained, but the threshold voltage (Vth) becomes lower than that of conventional MOSC-HEMTs. The fin width dependence shows continuous Vth decrease by decreasing the fin width, indicating that the narrower fin-gate channel is dominated by the fin sidewalls that are depletion mode nature. The channel sheet resistance extracted from channel length dependence and device transconductance for Fin-MOSC-HEMTs are superior to those of conventional MOSC-HEMTs when they are normalized by effective gate width as the summation of fin width, indicating contribution from sidewalls to channel conduction. Temperature dependence of Vth shows clearly different behavior between the MOSC-HEMT and Fin-MOSC-HEMT. These results demonstrate sidewall-dominated characteristics of these Fin-MOSC-HEMTs.
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