期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 1, 页码 295-300出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2228865
关键词
hot carrier (HC); inverter; negative bias temperature instability (NBTI); polycrystalline silicon (poly-Si); voltage transfer characteristics (VTC)
资金
- Natural Science Foundation of Jiangsu Province of China [BK2009112]
- National Natural Science Foundation of China [61076085]
- State Key Lab. of ASIC and System, Fudan University [10KF002]
Degradation of polycrystalline silicon (poly-Si) thin-film transistor (TFT)-based CMOS inverters under AC operation is studied. Based on a previous drain current model of poly-Si TFTs including the kink effect, the voltage transfer characteristics of both fresh and stressed inverters are well described. It is determined that hot carrier of the n-TFT and negative bias temperature instability of the p-TFT are competing degradation mechanisms controlling the observed two-stage degradation of the inverter. Based on such mechanisms, degradation of inverter under various AC operation conditions can be qualitatively predicted. It is found that under given frequency and amplitude of the input pulse voltage, inverter's degradation can still be effectively suppressed by increasing the pulse falling time, and/or decreasing the low voltage duration.
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