期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 7, 页码 2224-2230出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2261072
关键词
Electrothermal simulation; GaN high-electron-mobility transistor (HEMT); GaN metal-oxide-semiconductor field-effect transistor (MOSFET); power electronics; thermal performance
资金
- DOE GIGA program
- MIT-Singapore SMART program
- MIT GaN Energy Initiative
In this paper, we present self-consistent electrothermal simulations of single-finger and multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and lateral AlGaN/GaN high-electron-mobility transistors (HEMTs) and compare their thermal performance. The models are first validated by comparison with experimental dc characteristics, and then used to study the maximum achievable power density of the device without the peak temperature exceeding a safe operation limit of 150 degrees C (P-150 degrees C). It is found that the vertical MOSFETs have the potential to achieve a higher P-150 degrees C than the lateral HEMTs, especially for higher breakdown voltages and higher scaling level designs.
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