期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 10, 页码 3105-3111出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2272334
关键词
AlGaN/GaN; high electron mobility transistor (HEMT); Ka-band; millimeter-wave transistor; power density
资金
- French National Research Agency
- pole of competitiveness Pegase
- French Ministry of Defense Delegation Generale de l'Armement
- Nord-Pas de Calais French region
In this paper, we propose to optimize Al0.29Ga0.71N/GaN heterostructures on silicon substrate to obtain high electron mobility transistors featuring high-power/frequency performances. The polarization electric fields are engineered by varying the layer thicknesses of the cap and the barrier, and by changing the type of buffer (GaN or AlGaN). The aim of this paper is to find the best tradeoff between the active layer thickness reduction and the achievement of a reasonable drain current to satisfy the requirements for high performances. The optimum heterostructure device presents an output power density of 1.5 W/mm at 40 GHz, among the best reported on silicon substrate.
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