期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 9, 页码 2444-2452出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2205256
关键词
Contact resistance; edge contact; multilayer graphene (MLG); top contact; 1-D contact model
资金
- National Science Foundation [CCF-0811880]
- Direct For Computer & Info Scie & Enginr [0811880] Funding Source: National Science Foundation
- Division of Computing and Communication Foundations [0811880] Funding Source: National Science Foundation
Parasitic components are becoming increasingly important with geometric scaling in nanoscale electronic devices and interconnects. The parasitic contact resistance between metal electrodes and multilayer graphene (MLG) is a key factor determining the performance ofMLG-based structures in various applications. The available methods for characterizing metal-MLG contact interfaces rely on a model based on the top-contact structure, but it ignores the edge contacts that can greatly reduce the contact resistance. Therefore, in the present work, a rigorous theoretical 1-D model for metal-MLG contact is developed for the first time. The contribution of the major components of resistance-the top and edge contacts (side and end contacts) and the MLG sheet resistivity-to the total resistance of the structure is included in the model. The 1-D model is compared to a 3-D model of the system, and a method for investigation and optimization of the range of validity of the 1-D model is developed. The results of this work provide valuable insight to both the characterization and design of metal-MLG contacts.
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