期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 12, 页码 3442-3449出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2220968
关键词
Flexible display; gate insulator (GI); organic semiconductor (OSC); thin-film transistors (TFTs)
资金
- U.S. Department of Commerce [BS123456]
We developed a flexible active-matrix (AM) organic light-emitting diode (OLED) display driven by an organic thin-film transistor (TFT) (OTFT) using an air-stable organic semiconductor (OSC) of dinaphtho[2, 3-b : 2', 3'-f]thieno[3, 2-b]thiophene (DNTT) for the first time. We employed a low-temperature cross-linkable olefin-type polymer as the gate insulator (GI) and investigated the properties of the interface between DNTT and polymer GI. The top-contact TFT demonstrated a high mobility of up to 0.8 cm(2)/V . s and a near-zero turn-on voltage. DNTT has a deeper highest occupied molecular orbital level than other OSC materials, and this leads to large contact resistance between the source/drain (S/D) contact and OSC. Surface modifications to the S/D contact were investigated to enable efficient carrier injection to fabricate high-performance bottom-contact TFTs. The short-channel TFT we fabricated exhibited a high hole mobility of 0.5 cm(2)/V . s, a low subthreshold slope of 0.31, and excellent environmental and operational stability. The DNTT-based TFT also demonstrated good applications to processes with less deterioration. Finally, a 5-in flexible OLED display was successively fabricated by integrating the AM backplane with a phosphorescent OLED device. A high luminescence over 300 cd/m(2) was achieved by driving the DNTT-based OTFTs.
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