期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 8, 页码 2180-2186出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2198823
关键词
Analog circuits; energy barrier; gain; robustness; thin film transistors
资金
- Engineering and Physical Sciences Research Council (EPSRC), U. K. [EP/P503892/1]
- Royal Academy of Engineering
Source-gated transistors (SGTs) have potentially very high output impedance and low saturation voltages, which make them ideal as building blocks for high-performance analog circuits fabricated in thin-film technologies. The quality of saturation is greatly influenced by the design of the field-relief structure incorporated into the source electrode. Starting from measurements on self-aligned polysilicon structures, we show through numerical simulations how the field plate (FP) design can be improved. A simple source FP around 1 mu m long situated several tens of nanometers above the semiconductor can increase the low-voltage intrinsic gain by more than two orders of magnitude and offers adequate tolerance to process variations in a moderately scaled thin-film SGT.
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