期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 7, 页码 1936-1940出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2195317
关键词
Constriction resistance; contact resistance; electrical contacts; skin depth; spreading resistance; thin films
资金
- Air Force Office of Scientific Research Grant on the Basic Physics of Distributed Plasma Discharges
- AFOSR [FA9550-09-1-0662]
- L-3 Communications Electron Device Division
- Northrop Grumman Corporation
- University of Michigan Institute for Plasma Science and Engineering
The spreading resistance of a microscopic area of contact (the alpha-spot) located in a thin film is studied for both Cartesian and cylindrical geometries. The effect of film thickness h on the spreading resistance is evaluated over a large range of aspect ratios. In the limit h -> 0, the normalized thin-film spreading resistance (R) over bar (s) converges to the finite values, i.e., 2.77 for the Cartesian case and 0.28 for the cylindrical case. An interpretation of these limits is given. Extension to a general a-spot geometry is proposed.
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