期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 3, 页码 661-665出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2177096
关键词
InAs nanowires; strain-modulated electronic properties; tight-binding; wave function symmetry
A tight-binding sp(3)d(5)s* orbital basis quantum simulation is performed to study the uniaxial stress-modulated electronic properties of an InAs nanowire in three different crystallographic directions. Over the entire range of axial stress used in this study, the wire exhibits a direct band gap under uniaxial stress in < 100 > and < 111 > directions; however, a direct to indirect transition is observed in < 110 > direction at a relatively large tensile stress. The band gap variation with stress is linear in < 100 > and < 111 > directions, and the gap is relatively insensitive to external stress in < 110 > direction. However, after the direct to indirect transition in < 110 > direction, the band gap is reduced with stress. The electron and hole effective masses show the highest dependence on external stress in < 100 > direction, and a big jump in the hole effective mass is observed in < 100 > and < 110 > directions under tensile stress. From the projection of normalized wave function to different orbitals, it is found that the direct to indirect transition in < 110 > direction and the discontinuity in the hole effective mass in < 100 > and < 110 > directions result from the change in top valence band wave function symmetry.
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