期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 2, 页码 427-432出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2092778
关键词
Current flow mechanism; dopant-segregated SB (DSSB); dopant segregation (DS); erbium silicide; ErSi1.7; platinum silicide; PtSi; Schottky barrier (SB); Schottky-barrier (SB) MOSFET; silicon-on-insulator (SOI); thermionic emission (TE); transconductance; tunneling
资金
- Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (MKE/KEIT) [10035320, 10029953]
- Ministry of Education, Science and Technology [2009-0082583]
- Korea government [K20901000002-09E0100-00210]
- Samsung Electronics Co., Ltd
- Korea Evaluation Institute of Industrial Technology (KEIT) [20104010100660, 10035320] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [11ZE1150] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-00454, 2009-0082583, 과C6A1611] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This paper experimentally investigates the unique behavior of transconductance (g(m)) in the Schottky-barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) with various silicide materials. When the Schottky-barrier height (SBH) or a scaling parameter is not properly optimized, a peculiar shape of g(m) is observed. Thus, g(m) can be used as a novel metric that exhibits the transition of the carrier injection mechanisms from a thermionic emission (TE) to thermally assisted tunneling (TU) in the SB-MOSFETs. When the local maximum point of g(m) is observed, it can be expected that an incomplete transition occurs between TE and TU in SB-MOSFETs. When a dopant-segregation (DS) technique is implemented in the SB-MOSFETs, however, the carrier injection efficiency from the source to the channel is significantly improved, although the SBH is not minimized. As a consequence, the peculiar shape of the g(m) disappears, i.e., a complete transition from TE to TU can be enabled by the DS technique.
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