期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 10, 页码 3246-3253出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2161088
关键词
Memory modeling; nonvolatile memory; resistive-switching memory (RRAM)
资金
- Intel [55887]
- Fondazione Cariplo [2010-0500]
Set and reset characteristics are studied for unipolar and bipolar metal-oxide resistive-switching memory devices. We show a universal dependence of set-state resistance and reset current on the compliance current used during set, with negligible impact of metal-oxide composition and switching condition. An analytical Joule-heating model for universal reset is presented, predicting a weak dependence of reset temperature and voltage on diffusion and migration parameters in both unipolar-and bipolar-switching modes. Data for the reset voltage are shown for a wide range of unipolar and bipolar metal oxides, in support of our calculations.
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