期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 10, 页码 3622-3625出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2161314
关键词
AlGaN/GaN high-electron mobility transistor (HEMT); analytical models; two-dimensional electron gas (2DEG) charge density
资金
- European Commission [218255]
- Norwegian Research Council [970141669]
In this brief, we present a physics-based analytical model for 2-D electron gas density n(s) in AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi level E-f and n(s). The model is developed by considering the variation of E-f, the first subband E-0, the second subband E-1, and n(s) with applied gate voltage V-g. The proposed model is in very good agreement with numerical calculations.
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