期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 9, 页码 2824-2830出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2100045
关键词
Defects; edge roughness; graphene nanoribbons; impurities; low-field mobility; phonons; scattering
资金
- European Commission through the Network of Excellence Silicon-based nanostructures and nanodevices [216171]
- Graphene-based Nanoelectronic Devices project [215752]
- Ministero dell'Istruzione, dell'Universita e della Ricerca [2008S2CLJ9]
- Consiglio Nazionale delle Ricerche
- European Commission [ERAS- CT-2003-980409]
We have investigated the main scattering mechanisms affecting the mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects the mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared with the few experiments available in the literature.
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