期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 10, 页码 3335-3341出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2162333
关键词
FinFET; radio frequency (RF) characterization; RF extraction method; self-heating effects; silicon on insulator (SOI)
资金
- European Community [216171]
Multigate semiconductor devices are celebrated for improved electrostatic control and reduced short-channel effects. However, nonplanar architectures suffer from increases of access resistances and capacitances, as well as self-heating effects due to confinement and increased phonon boundary scattering. In silicon-on-insulator (SOI) technology, the self-heating effects are aggravated by the presence of a thick buried oxide with low thermal conductivity, which prevents effective heat removal from the device active region to the Si substrate. Due to the shrinking of device dimensions in the nanometer scale, the thermal time constant that characterizes the dynamic self-heating is significantly reduced, and radio frequency extraction techniques are needed. The dynamic self-heating effect is characterized in n-channel SOI FinFETs, and the dependence of thermal resistance on FinFET geometry is discussed. It is experimentally confirmed that the fin width and the number of parallel fins are the most important parameters for thermal management in FinFETs, whereas fin spacing plays a less significant role.
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