期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 11, 页码 3970-3975出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2164408
关键词
Atomic layer deposition (ALD); gallium nitride; heterojunction; white-light-emitting diode (LED); zinc oxide
资金
- National Science Council of Taiwan [NSC98-2112-M-002-018-MY2, NSC100-3113-E002-011]
White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN interface to the conduction band in n-ZnO is responsible for the reverse breakdown. The EL spectrum was composed of the blue light at 450 nm and the broadband around 550 nm, which originated from the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinate of the EL spectrum was (0.31, 0.36), which is very close to (0.33, 0.33) of the standard white light.
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