期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 10, 页码 3300-3306出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2161992
关键词
Ballistic transport; band-gap opening; bilayer graphene (BLGs); field-effect transistors (FET); graphene nanoribbons (GNRs); mexican hat structure
资金
- Semiconductor Technology Academic Research Center
- Grants-in-Aid for Scientific Research [23560395] Funding Source: KAKEN
Although a graphene is a zero-gap semiconductor, band-gap energy values up to several hundred millielectronvolts have been introduced by utilizing quantum-mechanical confinement in nanoribbon structures or symmetry breaking between two carbon layers in bilayer graphenes (BLGs). However, the opening of a band gap causes a significant reduction in carrier velocity due to the modulation of band structures in their low-energy spectra. In this paper, we study intrinsic effects of the band-gap opening on ballistic electron transport in graphene nanoribbons (GNRs) and BLGs based on a computational approach, and discuss the ultimate device performances of FETs with those semiconducting graphene channels. We have shown that an increase in the external electric field in BLG-FETs to obtain a larger band-gap energy degrades substantially its electrical characteristics because of deacceleration of electrons due to a Mexican hat structure; therefore, GNR-FETs outperform in principle BLG-FETs.
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