期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 11, 页码 3869-3875出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2163721
关键词
Band offset; chlorine surface treatment; low-frequency noise; vapor cooling condensation system; X-ray photoelectron spectroscopy (XPS)
资金
- National Science Council of Taiwan [NSC-99-2221-E-006-208-MY3]
- Ministry of Economic Affairs of Taiwan, Republic of China [99-EC-17-A-05-S1-154]
- National Science Council of Taiwan, Republic of China [NSC-99-2221-E-006-208-MY3]
The intrinsic ZnO (i-ZnO) film deposited by a vapor cooling condensation system was used as the gate dielectric layer of the AlGaN/GaN MOS-HEMTs. The chlorine surface treatment was utilized to obtain a high-quality i-ZnO/AlGaN interface due to the reduced surface state density. The chlorine-treated MOS-HEMTs showed the better direct current and pulsed output performances than those of the untreated MOS-HEMTs. The resulting unit gain cutoff frequency and the maximum frequency of oscillation were 9.5 and 19.4 GHz, respectively. The Hooge's coefficient was 7.23 x 10(-6), when the chlorine-treated ZnO-gate MOS-HEMTs operated at 100 Hz and the gate-source voltage of -4 V. Compared with the untreated MOS-HEMTs, the chlorine-treated MOS-HEMTs revealed better performances. The valence-band offset of i-ZnO/AlGaN was measured by X-ray photoelectron spectroscopy. The valence-band offset of the i-ZnO film on the untreated and the chlorine-treated AlGaN was 1.53 and 2.05 eV, respectively. The conduction-band offset of the i-ZnO film on the untreated AlGaN and the chlorine-treated AlGaN was deduced to be 0.77 and 1.29 eV, respectively. The improved performances of the chlorine-treated MOS-HEMTs and the enhanced conduction-band offset of the i-ZnO/AlGaN interface were attributed to the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface by using the chlorine surface treatment.
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