期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 10, 页码 3599-3603出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2162413
关键词
Aluminum nitride (AlN); complementary metal-oxide-semiconductor (CMOS); dual frequency; dual mode; microelectromechanical systems (MEMS); oscillator; piezoelectric; reconfigurable; resonator; switchless
资金
- DARPA ST
For the first time, this work demonstrates a switchless dual-frequency (472 MHz and 1.94 GHz) reconfigurable CMOS oscillator using a single piezoelectric AlN microelectromechanical-systems resonator with coexisting S0 and S1 Lamb-wave modes of vibration. High performance (high quality factor Q and electromechanical coupling factor kappa(2)(t) for a resonator and low phase noise for an oscillator) has been achieved for both the resonator and oscillator in terms of dual-mode operation. In particular, 1.94-GHz operation has the best phase noise performance at 1-MHz offset when compared with all previously reported CMOS oscillators that work at a similar frequency.
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