期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 7, 页码 2036-2040出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2136342
关键词
Internal gain; photosensivity; photosensor; ZnO nanowire (NW)
资金
- National Cheng Kung University Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology
- Technology Development Program for Academia Lamp Development of White Light-Emitting Diode for Local Lighting Program
- National Science Council of Taiwan [NSC 96-2221-E-006-079-MY3, TDPA 97-EC-17-A-07-S1-105, NSC 97-2623-E-168-001-IT, NSC-98-2221-E-150-005-MY3]
- Ministry of Economic Affairs Bureau of Energy of Taiwan [99-D0204-6]
This paper demonstrates the fabrication of transparent ultraviolet (UV) photosensors with a self-assembling ordered ZnO nanowired network. The average optical transmission of the entire networked photosensor structure in the visible range of the spectrum is about 70%. At an applied bias of 5 V and 340-nm irradiation, the photoresponsivity and the ratio of UV-to-visible rejection was 175.58 and 207.63 A/W for the transparent UV photosensors. For a bandwidth of 100 Hz and an applied bias of 5 V, the noise equivalent power and normalized detectivity of the devices were 2.32 x 10(-10) W and 4.36 x 10(8) cm . Hz(0.5)/W, respectively.
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