期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 4, 页码 1029-1037出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2107521
关键词
Device simulation; inelastic optical phonons; multigate nanowire transistor; nonequilibrium Green's function (NEGF); quantum transport
资金
- Science Foundation Ireland [05/IN/I888]
- Program for Research in Third-Level Institutions
- European Community [216171, 216373]
This paper presents the effect of different elastic acoustic and inelastic optical electron-phonon interaction mechanisms on quantum transport and electrical characteristics of multigate silicon nanowire FETs. A 3-D quantum-mechanical device simulator based on the nonequilibrium Green's function formalism in the uncoupled mode space that can handle electron-phonon interactions has been developed to extract the physical parameters of the devices. The electron-phonon scattering has been treated by using the self-consistent Born approximation and deformation potential theory. Utilizing this simulator, we show that interaction of the carriers with optical phonons redistributes the energy and momentum of electrons in the transport direction, depending on the energy of the phonon. Optical phonons cause either a reduction of the electron density or an increase of the electron concentration in the channel region, depending on the phonon energy and coupling strength. Finally, we show that the critical length for carriers to get backscattered in the silicon nanowire is directly proportional to the phonon energy.
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