期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 4, 页码 1127-1133出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2109388
关键词
Hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs); light-induced effect on HIZO TFT; stability of HIZO TFT
资金
- Samsung Advanced Institute of Technology
- Inter-University Semiconductor Research Center in Seoul National University
- Korea Institute of Industrial Technology(KITECH) [B0000058] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
For the first time, a comprehensive study is done regarding the stability under simultaneous application of light and gate dc bias in amorphous hafnium-indium-zinc-oxide (alpha-HIZO) thin-film transistors (TFTs). Subthreshold swing (SS) degradation, a negative threshold voltage (V-th) shift, and the occurrence of hump are observed in transfer curves after applying a negative gate bias and light stress. Based on the retention test at room temperature and the hysteresis analysis, it is revealed that all these phenomena result from hole trapping in the gate insulator. Moreover, it is proven that the SS degradation and hump occurrence are mainly attributed to hole trapping in SiO2 at the edge regions along the channel length/width directions and that a negative V-th shift is derived from hole trapping in the gate insulator far from the SiO2/HIZO interface.
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