期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 5, 页码 1371-1380出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2118213
关键词
Atomistic; full-band simulations; interface roughness scattering (IRS); Si gate-all-around (GAA) nanowire (NW) transistors
资金
- Network for Computational Nanotechnology under National Science Foundation [EEC-0228390]
- National Science Foundation [OCI-0749140]
- Nanoelectronics Research Initiative through Midwest Institute for Nanoelectronics Discovery
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field-effect transistors is numerically investigated using a full 3-D quantum transport simulator based on an atomistic sp(3)d(5)s* tight-binding model. An interface between silicon and silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function. An oxide layer is modeled in a virtual crystal approximation using fictitious SiO2 atoms. < 110 >-oriented NWs with different diameters and randomly generated surface configurations are studied. An experimentally observed ON-current and threshold voltage are quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental data.
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