期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 58, 期 7, 页码 1822-1829出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2135355
关键词
Excimer laser annealing (ELA); nanowire tunneling field-effect transistor (NW-TFET); steep-slope transistors; ultrathin-body silicon-on-insulator (SOI)
资金
- Center for Functional Engineered Nano Architectonics [104295]
- National Science Foundation
We have experimentally established that the inverse subthreshold slope S of a Si nanowire tunneling field-effect transistor (NW-TFET) array can be within 9% of the theoretical limit when the doping profile along the channel is properly engineered. In particular, we have demonstrated that combining excimer laser annealing with a low-temperature rapid thermal anneal results in an abrupt doping profile at the source/channel interface as evidenced by the electrical characteristics. Gate-controlled tunneling has been confirmed by evaluating S as a function of temperature. The good agreement between our experimental data and simulation allows performance predictions for more aggressively scaled TFETs. We find that Si NW-TFETs can be indeed expected to deliver S-values below 60 mV/dec for optimized device structures.
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