期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 57, 期 1, 页码 108-118出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2033649
关键词
Degradation; failure analysis; gallium nitride (GaN); light-emitting diode (LED); reliability
资金
- CARIPARO Foundation
- Italian Ministry of Industry (MISE)
We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LEDs). A number of reliability tests are presented, and specific degradation mechanisms of state-of-the-art LED structures are analyzed. In particular, we report recent results concerning the following issues: 1) the degradation of the active layer induced by direct current stress due to the increase in nonradiative recombination; 2) the degradation of LEDs submitted to reverse-bias stress tests; 3) the catastrophic failure of advanced LED structures related to electrostatic discharge events; 4) the degradation of the ohmic contacts of GaN-based LEDs; and 5) the degradation of the optical properties of the package/phosphors system of white LEDs. The presented results provide important information on the weaknesses of LED technology and on the design of procedures for reliability evaluation. Results are compared with literature data throughout the text.
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