期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 57, 期 5, 页码 1102-1109出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2044295
关键词
Current oscillation; low temperature; multiplegate MOSFET; nanowire; numerical device modeling; 3-D simulation; 1-D quantum transport
资金
- Science Foundation Ireland [05/IN/I888, 06/IN.1/1857]
In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).
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