期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 57, 期 1, 页码 195-200出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2035540
关键词
Contact resistance; device simulation; organic thin-film transistor (OTFT); planar structure; staggered structure
A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.
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