期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 57, 期 5, 页码 973-979出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2044285
关键词
High mobility; high-k; InGaAs; metal-oxide-semiconductor field-effect transistor (MOSFET); surface passivation
资金
- National Research Foundation, Singapore [NRF-RF2008-09]
- Defence Science and Technology Agency, Singapore [POD0814040]
We report the integration of silane and ammonia (SiH4 + NH3) surface passivation technology to realize high-quality gate stack on a high-mobility In0.53Ga0.47 As compound semiconductor. Vacuum anneal at 520 degrees C desorbs the native oxide while preserving the surface morphology and material composition of In0.53Ga0.47 As. By incorporating SiH4 + NH3 passivation, a thin silicon oxynitride (SiOxNy) interfacial layer was formed during high-k dielectric deposition. In0.53Ga0.47 As n-MOSFETs with SiH4 + NH3 passivation demonstrate significantly reduced subthreshold swing and OFF-state leakage current I-off in comparison with control In0.53Ga0.47 As n-MOSFETs without passivation. This is due to significant reduction of interface state density D-it. Improvement in carrier mobility over the control In0.53Ga0.47 As n-MOSFETs was also achieved with SiH4 + NH3 passivation.
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