期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 57, 期 11, 页码 2848-2856出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2068430
关键词
FinFET; line edge roughness (LER); mismatch; modeling; subthreshold swing; threshold voltage; variability
资金
- [ENIAC-120003]
In this paper, we study the drain-current mismatch of FinFETs in subthreshold, from both modeling and experimental point of view. We propose a simple model that takes into account the effect of threshold voltage and subthreshold swing fluctuations and their correlation. For long-channel devices (longer than a critical length L-C), characterized by a subthreshold swing close to the ideal value, the overall current mismatch is dominated by threshold voltage fluctuations and, therefore, is gate voltage independent. The subthreshold swing fluctuations give a negligible effect on the drain-current mismatch and are uncorrelated with the threshold voltage fluctuations. For short-channel devices (shorter than a critical length L-C), characterized by a strong dependence of subthreshold swing on the channel length, the overall current mismatch presents an additional relevant contribution associated with the subthreshold swing fluctuations. This component depends on the gate voltage overdrive and is ascribed to the gate line edge roughness, resulting in a partial correlation between threshold voltage and subthreshold swing fluctuations.
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